N121-071 TITLE: High Voltage Metal Insulator Metal (MIM) Capacitor Technology

TECHNOLOGY AREAS: Sensors, Electronics

ACQUISITION PROGRAM: PEO IWS 2.0, Air and Missile Defense Radar (AMDR)

RESTRICTION ON PERFORMANCE BY FOREIGN CITIZENS (i.e., those holding non-U.S. Passports): This topic is "ITAR Restricted". The information and materials provided pursuant to or resulting from this topic are restricted under the International Traffic in Arms Regulations (ITAR), 22 CFR Parts 120 - 130, which control the export of defense-related material and services, including the export of sensitive technical data. Foreign Citizens may perform work under an award resulting from this topic only if they hold the "Permanent Resident Card", or are designated as "Protected Individuals" as defined by 8 U.S.C. 1324b(a)(3). If a proposal for this topic contains participation by a foreign citizen who is not in one of the above two categories, the proposal will be rejected.

OBJECTIVE: Develop a high capacitance Metal Insulator Metal (MIM) capacitor that has high voltage breakdown and utilizes a high-k dielectric with low thermal activation energy for Gallium Nitride (GaN) Microwave Monolithic Integrated Circuits (MMICs).

DESCRIPTION: DOD systems under development such as active phased array radars and communication systems will utilize Gallium Nitride (GaN) Microwave Monolithic Integrated Circuits (MMICs). GaN MMIC thin-film processes currently in use were leveraged from Gallium Arsenide (GaAs) MMIC technology, which normally operates under 12 Volts, and utilizes Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN) as the dielectric for the MIM capacitor. The PECVD SiN dielectric has proven to be inadequate at greater than 12 Volt MMIC operation. To achieve a higher capacitor voltage breakdown, MMIC foundries have resorted to stacking multiple MIM capacitors in series, taking up sizable MMIC area, and increasing the MMIC cost.

This topic seeks innovative materials and processes leading to a replacement of the SiN dielectric with a high-k dielectric (e.g., Tantalum Pentoxide or Hafnium Oxide) with high voltage breakdown that reliably supports 50 Volt DC GaN MMIC operation. Currently, there are no high-k dielectric MIM MMIC capacitors at foundries. MIM capacitors that use the SiN dielectric have been yield drivers for GaAs and GaN MMICs and have driven up MMIC costs and adversely affect system reliability. The higher operating voltage of GaN will require capacitors with breakdown voltages greater than 200 volts for reliable operation. Of particular interest are technologies such as Atomic Layer Deposition (ALD) that can replace existing deposition processes (e.g., sputtered materials and PECVD) and can result in smaller capacitors with fewer defects. For example, ALD deposited thin film stack-ups of defect free high-k dielectrics could reduce capacitor size and increase the voltage breakdown.

PHASE I: The company will develop innovative research and development concepts that demonstrate the feasibility of the proposed approach to develop MIM high-k dielectric capacitors for GaN microwave power amplifiers. The company will demonstrate the feasibility of the proposed approach via analysis and/or fabrication of a MIM capacitor. Feasibility demonstrations will include material fabrication and testing and/or analytical modeling. Proposed concepts must demonstrate the potential to meet all requirements for MIM capacitors. The company will provide a Phase II development plan with performance goals, key technical milestones, and testing.

PHASE II: Based on the results of Phase I and consistent with the Phase II development plan, the company will develop MMIC MIM capacitors for evaluation. The company will evaluate the prototype MIM capacitors to determine their ability to meet the performance goals defined in Phase I. Capacitor performance will be demonstrated through prototype evaluation over the required range of parameters (e.g., voltage breakdown, temperature, capacitance per unit area, footprint, and so forth). Evaluation results will be used to refine the prototype material and the deposition process into an initial MMIC fabrication process that will be compatible with GaN MMIC fabrication. Testing of the new capacitor will include reliability testing. The company will also conduct a cost model of MIM capacitor fabrication. The company will prepare a Phase III development plan to transition the technology to Navy use.

PHASE III: In Phase III the small business will transition the developed MIM material(s) and process(es) directly into the GaN MMIC foundries that fabricate MMICs for Navy radar systems.

PRIVATE SECTOR COMMERCIAL POTENTIAL/DUAL-USE APPLICATIONS: GaN power amplifier technology has significant commercial potential for the cell phone industry, WiMAX (Worldwide interoperability for Microwave Access), commercial radars and commercial communication systems.

REFERENCES:
1. S.M Sze, "Physics of Semiconductor Devices", John Wiley & Sons, 1981

2. Robert Soares, "GaAs MESFET Circuit Design", ARTECH House, 1988

3. J. Gurganus, T. Alcorn, A. Mackenzie and Z. Ring, "Investigation and Improvement of Early MIM Capacitor Breakdown with a Focus on Edge Related Failures, "CS MANTECH Conference, May 17th-20th, 2010, Portland, Oregon, USA

KEYWORDS: Atomic Layer Deposition (ALD); Metal Insulator Metal (MIM) Capacitor; Gallium Nitride (GaN); Microwave Monolithic Integrated Circuit (MMIC); Thin-Film Technology; High-k Dielectrics

** TOPIC AUTHOR (TPOC) **

DoD Notice:   Between November 9 and December 11, 2011, you may talk directly with the Topic Authors to ask technical questions about the topics. Their contact information is listed above. For reasons of competitive fairness, direct communication between proposers and topic authors is not allowed starting December 12, 2011, when DoD begins accepting proposals for this solicitation.

However, proposers may still submit written questions about solicitation topics through the DoD's SBIR/STTR Interactive Topic Information System (SITIS), in which the questioner and respondent remain anonymous and all questions and answers are posted electronically for general viewing until the solicitation closes. All proposers are advised to monitor SITIS (12.1 Q&A) during the solicitation period for questions and answers, and other significant information, relevant to the SBIR 12.1 topic under which they are proposing.

If you have general questions about DoD SBIR program, please contact the DoD SBIR Help Desk at (866) 724-7457 or email weblink.