GaN Avalanche Devices for RF Power Generation Navy SBIR FY2015.2 Sol No.: Navy SBIR FY2015.2 Topic No.: N152-114 Topic Title: GaN Avalanche Devices for RF Power Generation Proposal No.: N152-114-0243 Firm: White Light Power Inc. 149 Cuesta Drive Los Altos, California 94022 Contact: Richard Brown Phone: (607) 351-9768 Abstract: White Light Power Inc. (WLPI) is a start-up company bringing the unique experience of distinguished researchers with singular experiences on GaN-on-GaN diode and IMPATT device development and testing. WLPI is proposing a Phase-1 and Phase-1-Option combined project that identifies and proposes to address key issues that will enable high-power GaN IMPATT oscillators in the W-band (75-110 GHz). With the development and experimental demonstrations of key technology components the feasibility of W-Band power generation by GaN IMPATT devices will be ascertained preparing the WPLI lead effort for a Phase-2 project. Benefits: Radio Frequency (RF) power generation by diode sources are needed to enable compact and cost-efficient sources that may be utilized with a wide range of sensor applications in the W-band and above, extending into submillemeter-wave. GaN based impact ionization avalanche transit-time (IMPATT) diodes are potentially attractive candidates for generating significant power in the microwave through millimeter-wave frequency range due the high-breakdown field, high saturation velocity and high-temperature handling capability. With the successful outcome of this project, a range of military and consumer applications and products such as cost-efficient millimeter-wave imaging radars, detectors using RF technology, and high-speed local wireless networks will become possible. Return