W-band GaN IMPATT Devices
Navy SBIR FY2015.2


Sol No.: Navy SBIR FY2015.2
Topic No.: N152-114
Topic Title: W-band GaN IMPATT Devices
Proposal No.: N152-114-0033
Firm: QuinStar Technology, Inc.
24085 Garnier Street
Torrance, California 90505
Contact: John Kuno
Phone: (310) 320-1111
Abstract: QuinStar Technology, Inc. proposes to develop a GaN IMPATT (IMPact-ionization Avalanche Transit Time) device operating at W-band for power generation applications. The approach is based on advanced material development of low defect GaN vertical structures, comprehensive device modeling and optimization, and state-of-the-art fabrication and packaging techniques, supported by a strong team and commercialization strategy.
Benefits: Navy: EW and radar (seeker) applications such as NEMESIS, AARGM programs; Other DoD: Tube replacement and legacy transmitter element replacement such as MILSTAR SATCOM applications; Commercial/Industrial: NASA remote sensing sources for MMW and THz frequencies, NASA MMW deep space communications, weather/security/surveillance radars, THz noise sources.

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