Extreme Temperature, Low Loss Custom Power Switch Navy SBIR FY2015.1 Sol No.: Navy SBIR FY2015.1 Topic No.: N151-065 Topic Title: Extreme Temperature, Low Loss Custom Power Switch Proposal No.: N151-065-1085 Firm: Mainstream Engineering Corporation 200 Yellow Place Pines Industrial Center Rockledge, Florida 32955 Contact: Troy Beechner Phone: (321) 631-3550 Web Site: http://www.mainstream-engr.com Abstract: The Navy is looking for advanced power semiconductor switching solutions to aid in the development of 6 MW/m3, 200-300 kW power conversion systems for extreme temperature environments. The application of this new switch covers temperatures ranging from -225 �C to 150 �C, a temperature range not covered by commercial devices. The main limiting factor of commercial switch solutions is the packaging material around and connecting to the semiconductor die. To allow for extreme high and low temperature operation, Mainstream proposes a compact GaN switch module utilizing materials that decrease material stackup thermal resistance, the number of dissimilar material interfaces, and increases module lifetime. With the inclusion of GaN devices, the module will also be capable of switching frequencies in excess of 200 kHz reducing power system magnetic and filter requirements and enabling an increase in system power density. In Phase I. Mainstream will complete the design and testing of the GaN switch module and the development of a physics based model for use in power conversion design. In Phase II, Mainstream will use the custom GaN switch module to demonstrate a full-scale prototype extreme temperature power converter on a simulated naval power system. Benefits: The development of the extreme temperature switch module is an important necessary step toward further increases in power system density. The switch has the potential to reduce the size and weight of power converters and enable new opportunities in areas such as naval weaponry and expeditionary systems, hybrid electric vehicles, super conducting electromagnetic energy storage for power utilities, and gas and oil drilling, to name a few. In addition, the inclusion of GaN semiconductor technology into the switch will also increase system efficiencies reducing operating cost compared with the competing semiconductor technology. Return