Ruggedized Wideband High Power Balanced Photodiode Receiver Navy SBIR FY2014.1 Sol No.: Navy SBIR FY2014.1 Topic No.: N141-013 Topic Title: Ruggedized Wideband High Power Balanced Photodiode Receiver Proposal No.: N141-013-0716 Firm: Discovery Semiconductors, Inc. 119 Silvia Street Ewing, New Jersey 08628 Contact: Shubo Datta Phone: (609) 434-1311 Web Site: http://www.discoverysemi.com Abstract: We will manufacture high current handling balanced photodiodes in a rugged 8-pin Kovar package having the following characteristics: (a) Small Package with height of 5 mm, and volume of 2.5 cubic cm; (b) Use 7 micron core, loose tube, SM fiber for tight bend radius; (c) Responsivity > 0.7 A/W at 1310 and 1550 nm; (d) 20 GHz bandwidth with total 1dB saturation current of 100 mA (50 mA per photodiode); (e) 40 GHz bandwidth with total 1dB saturation current of 50 mA (25 mA per photodiode); (f) CMRR > 20 dB for the entire frequency band; (g) Operating Temperature Range -40 to 100 degree Celcius; (h) OIP3 of minimum +40 dBm and, OIP2 +50 dBm per photodiode for 2 to 40 GHz frequency band. One packaged device of the high current handling balanced photodiode having a bandwidth of minimum 20 GHz will be delivered to NAVAIR. Benefits: The anticipated benefits for the NAVY are: Low Noise Figure and High Spurious Free Dynamic Range Photonic Links for Phased Array Radars, both Transmit and Receive. Return