Transparent Conductive AlGaN/GaN Coatings for EMI/RFI Attenuation Navy SBIR FY2014.1 Sol No.: Navy SBIR FY2014.1 Topic No.: N141-038 Topic Title: Transparent Conductive AlGaN/GaN Coatings for EMI/RFI Attenuation Proposal No.: N141-038-0224 Firm: Structured Materials Industries 201 Circle Drive North Unit # 102 Piscataway, New Jersey 08854 Contact: Nick Sbrockey Phone: (732) 302-9274 Web Site: www.structuredmaterials.com Abstract: In this SBIR program, Structured Materials Industries, Inc (SMI) and partners will develop an electrically conductive, optically transparent coating for attenuation of electromagnetic interference (EMI) and radio frequency interference (RFI). The proposed coating will be based on the wide bandgap semiconductor gallium nitride (GaN). GaN is transparent to radiation below its bandgap (Eg = 3.4 eV), and therefore an excellent candidate for optically transparent coatings in the 0.4 �m to 5.0 �m wavelength range. The electrical conductivity of GaN can be controlled over a wide range through modifications to the film composition or structure. GaN is also refractory and chemically stable, and should be resistant to salt spray, abrasion and solar radiation. The other key aspect of our technical approach is the use of metal organic chemical vapor deposition (MOCVD) to deposit the AlGaN/GaN based EMI/RFI attenuation coatings. MOCVD provides for excellent control of film composition and doping profiles, as well as easy scale-up to large area substrates, which can be either planar or 3-dimensional. Benefits: SMI also anticipates the AlGaN/GaN film technology developed in this SBIR to have significant commercial potential, for products such as LED's, RF amplifiers and power controllers. SMI will commercialize the technology for these markets through licensing, by supplying materials and deposition service work, and through sales of commercial group III nitride film deposition systems. Return